Product Type: eGaN Gate Driver
Current Status:
Product Overview
The TFG1200 is a High-side/low-side gate driver uniquely designed to drive enhancement
mode Gallium Nitride (eGaN) FETs. The TFG1200 provides the special requirements of an
eGaN FET driver: supply clamping, low pull-up and pull-down impedance, and high peak
currents all within a single IC. A higher sink capability maintains the gate driver
line at a low level during the fast dv/dt of the eGaN FET without unintended turn on
of the FET.
Fast propagation delays, fast rise times, and a proprietary bootstrap capacitor
auto-recharge allow higher switching frequencies allowing amaller component footprints;
and with the integrated bootstrap diode the required area compared to a discrete solution
is greatly reduced.