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News for the compound semiconductor and advanced silicon industryDOE announces 2017 solid-state lighting R&D funding opportunity Semiconductor Today News
  • Despite revolutionizing illumination, even top-of-the-line nitride LEDs are far from their maximum efficiency when operating at the high power needed for lighting applications. Logan Williams and Emmanouil Kioupakis at the University of Michigan have recently performed calculations that show that incorporating boron into the indium gallium nitride (InGaN) active region of nitride LEDs could be a step towards realizing higher efficiency at high power (‘BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs’, Applied Physics Letters 111, 211107 (2017))...

  • Solliance - a cross-border Dutch-Flemish-German thin-film photovoltaic (TFPV) solar energy R&D consortium in the ELAT (Eindhoven-Leuven-Aachen) region - has achieved record cell-level conversion efficiency of 13.5% and module-level aperture-area conversion efficiency of 12.2% for perovskite-based photovoltaics using industrially applicable, roll-to-roll (R2R) production processes...

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